AS ISO 17560:2006
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Surface chemical analysis – Secondary-ion mass spectrometry – Method for depth profiling of boron in silicon
| Published By | Publication Date | Number of Pages |
| AS | 2006-10-20 | 20 |
Adopts ISO 17560:2002 to specify a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon and using stylus profilometry or optical interferometry for depth scale calibration.
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