ASTM-F1725:1997 Edition

$35.75

F1725-97 Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

Published By	Publication Date	Number of Pages
ASTM	1997	3

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Category: ASTM

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Description

ASTM F1725-97

Historical Standard: Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

ASTM F1725

Scope

1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparations, etching solution selection and use, defect identification, and defect counting.

1.2 This practice is suitable for use if evaluating silicon grown in either (111) or (100) direction and doped either p or n type with resistivity greater than 0.005 Omega cm.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

dislocation; grain boundaries; ingot; polycrystaline imperfections; preferential etch; silicon; slip

ICS Code

ICS Number Code 29.045 (Semiconducting materials)

DOI: 10.1520/F1725-97

Additional information