BS ISO 23812:2009
$142.49
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
| Published By | Publication Date | Number of Pages |
| BSI | 2009 | 30 |
1.1
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
