BS IEC 60747-9:1998:2003 Edition

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Semiconductor devices. Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Published By	Publication Date	Number of Pages
BSI	2003	72

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Categories: 31.080.30 - Transistors, BSI

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Description

Product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods.

Additional information

Status	Withdrawn
Title	Semiconductor devices. Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Corrects	BS IEC 60747-9:1998
Publisher	BSI
Committee	EPL/47
Pages	72
Publication Date	2003-01-17
Withdrawn Date	2007-11-30
Replaced By	BS IEC 60747-9:2007
ISBN	0 580 30544 9
Standard Number	BS IEC 60747-9:1998
Identical National Standard Of	IEC 60747-9:1998
Descriptors	Bipolar transistors, Integrated circuits, Leakage currents, Response time, Temperature, Electrical properties and phenomena, Electric current, Electrical measurement, Circuits, Symbols, Graphic symbols, Capacitance, Voltage measurement, Time, Thermal resistance, Testing conditions, Voltage, Rated voltage, Electrical resistance, Transistors, Semiconductor devices, Dissipation factor, Electronic equipment and components, Current measurement, Rated current, Rated power, Electrical safety, Electrical insulation, Ratings
ICS Codes	31.080.30 - Transistors

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BS IEC 60747-9:1998:2003 Edition

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