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IEEE C62.42.3 2017:2018 Edition

$33.58

IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports — Part 3: Silicon PN-Junction

Published By Publication Date Number of Pages
IEEE 2018 42
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New IEEE Standard – Active. Surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42™ guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diodes, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples.

PDF Catalog

PDF Pages PDF Title
1 IEEE Std C62.42.3™-2017 Front cover
2 Title page
4 Important Notices and Disclaimers Concerning IEEE Standards Documents
7 Participants
8 Introduction
9 Contents
10 List of Figures
12 1. Scope
2. Normative references
13 3. Definitions, acronyms, and abbreviations
3.1 Definitions
15 3.2 Acronyms and abbreviations
16 4. Construction
4.1 Packaging
4.2 Semiconductor junction structure and electrical properties
22 5. Characteristics
5.1 Stand-off or maximum reverse working voltage, VRWM
5.2 Breakdown voltage, V(BR)
23 5.3 Clamping voltage, VC
24 5.4 Punch-through voltage, V(PT)
5.5 Snap-back voltage, V(SB)
5.6 Forward biased PN-junction voltage, VF
26 5.7 Junction capacitance CJ
27 5.8 Package inductance
28 6. Ratings
6.1 Peak pulse current, IPP
29 6.2 Maximum peak pulse power, PPPM
30 6.3 Power dissipation, PD
7. Application examples
7.1 Series connection
31 7.2 Parallel connection
32 7.3 DC supply protection
34 7.4 Power frequency protection
7.5 Signal protection
41 Annex A (informative) Bibliography
42 Back cover
IEEE C62.42.3 2017
$33.58