{"id":81236,"date":"2024-10-17T18:52:41","date_gmt":"2024-10-17T18:52:41","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/ieee-n42-31-2003\/"},"modified":"2024-10-24T19:46:05","modified_gmt":"2024-10-24T19:46:05","slug":"ieee-n42-31-2003","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/ieee\/ieee-n42-31-2003\/","title":{"rendered":"IEEE N42.31 2003"},"content":{"rendered":"
New IEEE Standard – Active. Standard measurement and test procedures are established for wide-bandgap semiconductor detectors such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe), and mercuric iodide (HgI2) that can be used at room temperature for the detection and quantitative characterization of gamma-rays, X-rays, and charged particles. Standard terminology and descriptions of the principal features of the detectors are included. Included in this standard is an annex on interfering electromagnetic noise, which is a factor in such measurements.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
2<\/td>\n | Title Page <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | Introduction Participants <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | Contents <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1. Overview 1.1 Scope 1.2 Purpose 1.3 Abbreviations <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 2. References 3. Definitions, symbols, and abbreviations 3.1 Definitions <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 3.2 Symbols <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 3.3 Abbreviations <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 4. Introduction <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 5. Detector characteristics <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 5.1 Low-side tailing <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 5.2 Charge collection <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 5.3 Resolution and efficiency indicators 5.4 High-side area (HSA) <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 5.5 Peak-to-valley ratio 6. Specifications 6.1 Geometry and packaging 6.2 Detector capacitance 6.3 Detector bias 6.4 Leakage current <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 6.5 Temperature operating range and temperature sensitivity 6.6 Detector performance 6.7 Test sources <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 6.8 Source types <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | 6.9 Source documentation 6.10 Timing properties 7. Spectrometer setup 7.1 Instrument grouping <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | 7.2 Detector and preamplifier 7.3 Shaping amplifier (main amplifier) <\/td>\n<\/tr>\n | ||||||
29<\/td>\n | 7.4 Pulse generator (pulser) 7.5 ADC and multichannel analyzer (MCA) 8. Zero settings and calibration 8.1 Zero offset, pulse generator <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | 8.2 Zero offset, amplifier 8.3 Zero offset, ADC <\/td>\n<\/tr>\n | ||||||
31<\/td>\n | 9. Measurements 9.1 Detector leakage current <\/td>\n<\/tr>\n | ||||||
32<\/td>\n | 9.2 Capacitance measurement <\/td>\n<\/tr>\n | ||||||
33<\/td>\n | 10. Measurement of energy resolution <\/td>\n<\/tr>\n | ||||||
34<\/td>\n | 10.1 Noise line width <\/td>\n<\/tr>\n | ||||||
35<\/td>\n | 11. Efficiency measurements 11.1 Gamma-ray counting efficiency for a full-energy peak 12. Peak-to-valley ratio <\/td>\n<\/tr>\n | ||||||
36<\/td>\n | Annex A <\/td>\n<\/tr>\n | ||||||
37<\/td>\n | Annex B <\/td>\n<\/tr>\n | ||||||
40<\/td>\n | Annex C <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation<\/b><\/p>\n |